| 摘要 |
PROBLEM TO BE SOLVED: To prevent variations in the thickness of a conductive film in a polishing process by preventing the generation of a level difference between the shoulder section and the flat section of a mask. SOLUTION: A mask pattern is formed on a mask layer for forming connection holes (S1). For the purpose of forming connection holes, the diameter of holes formed in the mask layer is reduced by means of a sidewall, and the sidewall is formed thicker in the connection hole formation direction than the thickness of the mask layer, to protect the shoulder section (S2). Thereafter, connection holes are formed by etching (S3). Then, a conductive film is formed (S4), and polishing is conducted by CMP method (S5).
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