发明名称 |
METHOD AND DEVICE FOR PLASMA TREATMENT |
摘要 |
PURPOSE:To simplify a means for generating a magnetic field by making the temporal average value of a voltage for forming an electric field zero when subjecting a sample to plasma treatment by applying an electric field and a magnetic field in a vacuum so as to enclose plasma effectively. CONSTITUTION:A sample is put on an electrode 11 through a gate valve 70 from a vacuum preparatory chamber 80 and a gas adjusted 32 to the predetermined flow is supplied to a treatment chamber 13 the air in which is exhausted by a reduced pressure 21 through a supply path of an electrode stem 14 from a gas source 31. The gas passes a dispersion chamber 10 and enters a discharge space through a hole. A part of the gas is exhausted by operation of a valve 22 and the predetermined pressure is retained. The predetermined high-frequency AC voltage is applied to an electrode 11 through a matching device 42 and the electrode stem 14 from a power source 41 to form an electric field between the electrode 11 and the opposite electrode 10. A magnetic field from a magnetic field generating means 50 crosses it to apply a DC voltage 61. At that time, the electrons in plasma make cycloid movement individually and as an aggregate, it reciprocates in a space 12 thereby enclosing a plasma effectively. Then the sample is treated at a high processing speed and with a small damage. |
申请公布号 |
JPS61163639(A) |
申请公布日期 |
1986.07.24 |
申请号 |
JP19850003344 |
申请日期 |
1985.01.14 |
申请人 |
HITACHI LTD |
发明人 |
HARADA TAKESHI;KAKEHI YUTAKA;NAWATA MAKOTO;NAKAZATO NORIO |
分类号 |
H01L21/205;H01L21/302;H01L21/3065 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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