发明名称 |
METHOD OF MANUFACTURING PYROELECTRIC INFRARED DETECTOR ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a pyroelectric infrared detector element capable detecting infrared rays using a pyroelectric which raises the dimensional accuracy of an orientated thin film pyroelectric for constituting an infrared photodetector, and realizes the improvement of the design quality/ yield to make a high power device. SOLUTION: The manufacturing method is to pattern a thin film pyroelectric 23 into a desired shape for constituting an infrared photodetector through a laminate etching mask made of an organic resist material and an inorganic resist material.
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申请公布号 |
JP2002208742(A) |
申请公布日期 |
2002.07.26 |
申请号 |
JP20010002182 |
申请日期 |
2001.01.10 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
NAKANISHI TSUTOMU;NOMURA KOJI |
分类号 |
G01J1/02;G01J5/02;G01J5/34;H01L37/02;(IPC1-7):H01L37/02 |
主分类号 |
G01J1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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