| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist material which is produced by using a high- molecular compound of the present invention as a base resin, which is sensitive to high energy rays, and excellent in sensitivity, resolution and etching resistance, and accordingly which is useful in microfabrication with electron beam or far infrared rays, and especially can form easily a pattern fine and perpendicular to the base material since the absorption at the exposure wavelength of ArF excimer laser and KrF excimer laser is small. SOLUTION: The acetal compound shown by general formula (1) (wherein, R is H or a 1-6C linear, branched or cyclic alkyl; X is (CH2)m whose one hydrogen atom is optionally substituted with a hydroxyl group or an acetoxy group; and k is 0 or 1, m is an integer satisfying 1<=m<=8, and n is 2 or 3), is provided. |
