| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor having an LDD region, without executing a process of forming and removing a photo resist layer, using the MIC and MILC phenomena. SOLUTION: The method of manufacturing a thin film transistor having a silicon active layer 31 having an LDD region and a gate electrode 33 comprises forming a crystallized induction metal layer 35 offset from a channel region on the active layer 31, using a mask 34 for forming the LDD region. According to this manufacturing method, no metal component by MIC resides on the channel region and a TFT having a reduced leak current and stable electric characteristics is obtained with a few of manufacturing steps.
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