| 摘要 |
PROBLEM TO BE SOLVED: To restrain and prevent short-circuittings of wirings which are caused by concentration of connection holes which are mutually adjacent to each other, in a semiconductor device whose wiring pitch is narrow. SOLUTION: On a semiconductor substrate 1, a wiring layer 2 is formed, and continuously, an interlayer insulating film 3 is formed, and is planarized. By using a resist film 4, on which aperture parts 5 are formed as an etching mask, the interlayer insulating film 3 is dry-etched, and connection holes 7, reaching the wiring layer 2 or an impurity diffusion region are formed. A conductor material film 8 is deposited on the substrate and planarized as far as a surface of the interlayer insulating film 3 is exposed, and plugs 9 constituted of the conductor material film 8 embedded in the connection holes 7 are formed. By polishing a surface of the substrate, an interlayer insulating film 3 in upper parts of the connection holes 7 which film is formed in a taper type is eliminated. As a result, the upper parts of the connection holes 7 which parts are adjacent to each other are isolated. |
