| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory device having a ferroelectric capacitor having a multilayer electrode structure, along with a manufacturing method. SOLUTION: A ferroelectric memory device includes a semiconductor substrate, having first and second transistors, an interlayer insulating film for covering the first and second transistors, and first and second ferroelectric capacitors stacked sequentially on the interlayer insulating film. The first ferroelectric capacitor includes a bottom electrode, a first ferroelectric film, and a middle electrode sequentially stacked on the interlayer insulation film. The second ferroelectric capacitor includes a middle electrode, a second ferroelectric film and an upper electrode laminated on the middle electrode sequentially. One or two unit cells can be formed, by selectively connecting the first and second transistors and the first and second ferroelectric capacitors respectively. Then, the unit cell can be formed in a narrow area, as compared with that of the conventional case, and enables are area that the capacitor occupies to be increased.
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