THIN FILM CRYSTALLINE WAFER HAVING PN JUNCTION AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A thin film crystalline wafer having pn junction and a method of manufacturing the same are provided to set an energy discrete value of a junction interface over a relatively wide range in an Inx Aly Ga1-x-y P/GaAs heterojunction. CONSTITUTION: A thin-film crystal wafer having a pn junction comprises the first crystal layer of p GaAs(6) and the second crystal layer of n InxAlyGa1-x-yP (0 <= x, y <= 1, x + y = 1)(7), the first and second crystal layers being lattice-matched layers that form a heterojunction wherein a thin film layer of InxAlyGa1-x-yP (0 <= x, y <= 1, x + y = 1)(8) differing in composition from the n InxAlyGa1-x-yP of the second crystal layer is formed at an interface of the heterojunction.