| 摘要 |
Silicon oxide films (3', 3'') are formed on respective main surfaces of a first silicon single-crystal substrate (bond wafer) (1) and a second silicon single-crystal substrate (base wafer) (2), and the first and second silicon single-crystal substrates (1, 2) are closely bonded via the silicon oxide films (3', 3'') in an atmosphere consisting of a clean air supplied via a boron discharging filter to produce an SOI wafer (10), a silicon single-crystal substrate having a resistivity inside the substrate of at least 100 cm being used as the second silicon single-crystal substrate (base wafer) (2). The SOI wafer (10) thus formed takes the form of providing inside the oxide film thereof a position where a boron concentration is maximum when a thickness-direction boron concentration distribution is measured in the silicon oxide film (3) thereof, thereby making it possible to produce an SOI wafer excellent
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