| 摘要 |
A method comprising etching a material under plasma etching conditions using an etching composition which has a GWP of no greater than about 3000 and which comprises at least one etchant compound having a formula selected from the group consisting of F-CO-[(CR1R2)m-CO]n-F and F-CO-R3-CO-F, and wherein: m=0, 1, 2, 3, 4, or 5; n=1; R1 & R2 represent H, F or CxHyFz; wherein: x=1 or 2; and y+z=2x+1; R3 represents CR4=CR5, R6R7C=C or C=C; wherein: R4-7 represent H, F, or CxHyFz; wherein: x=1 or 2; and y+z=2x+1; and also including the cleaning of a surface by use of an etchant compound, and further including an etching composition which includes said etchant compound and also an etchant-modifier.
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