| 摘要 |
<p>A magnetic storage element comprising a magnetoresistance element, a conductor for generating a magnetic flux to change the resistance of the element, and at least one ferromagmetic element through which this magnetic flux passes, wherein the ferromagnetic element forms a magnetic gap, the magnetic flux passes the above element at this magnetic gap, and the following relations a) through c) are satisfied: a) M1 ≤ 2Lg, b) at least one of Lw/Ly ≤ 5 and Ly/Lt ≥ 5, and c) Ly ≤ 1.0 νm; where, M1 is the length of the element measured in a direction parallel to the magnetic gap, Lg magnetic gap length, Lt ferromagnetic element thickness, Lw the length of the ferromagnetic element in the elongation direction of the conductor, Ly distance over which the magnetic flux passes in the ferromagnetic element. Another element useful for implementing a higher capacity similarly to the above element is provided.</p> |
