METHOD FOR FABRICATING BARRIER LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a barrier layer of a semiconductor device is provided to decrease resistance of an interconnection, by forming a titanium oxide layer as an air brake on an interface between a Ti layer and an Al layer so that reaction of the Ti layer and the Al layer is prevented in a subsequent heat treatment process. CONSTITUTION: The titanium layer(21) is formed on a semiconductor substrate(20). The surface of the exposed titanium layer is exposed to the air for a predetermined interval of time to form the titanium oxide layer(22). The aluminum layer(23) is formed on the titanium oxide layer.