| 摘要 |
<p>Methods for making thin silicon layers suspended over recesses (30) in glass wafers (22). One method includes providing a thin silicon-on-insulator (SOI) wafer (21), and a glass wafer (22). The SOI wafer (21) can include a silicon oxide layer (50) disposed between a first undoped or substantially undoped silicon layer (20) and a second silicon layer (60). Recesses (30) can be formed in the glass wafer surface (24) and electrodes (38) may be formed on the glass wafer surface (24). The first silicon layer (20) of the SOI wafer (21) is then bonded to the glass wafer surface (24) having the recesses (30), and the second silicon layer (60) is subsequently removed using the silicon oxide layer (50) as an etch stop. Next, the silicon oxide layer (50) is removed. The first silicon layer (20) can then be etched to form the desired structure. In another illustrative embodiment, the first silicon layer (120) has a patterned metal layer (129) positioned adjacent the recesses (30) in the glass wafer (22). The, the second silicon layer (60) is removed using the silicon oxide layer (50) as an etch stop, and the silicon oxide layer (50) is subsequently removed. The first silicon layer (120) is then etched using the patterned metal layer (129) as an etch stop. The patterned metal layer (120) is then removed.</p> |
