| 发明名称 |
FERROELECTRIC THIN FILM, METAL THIN FILM OR OXIDE THIN FILM, AND METHOD AND APPARATUS FOR PREPARATION THEREOF, AND ELECTRIC OR ELECTRONIC DEVICE USING SAID THIN FILM |
| 摘要 |
A ferroelectric thin film, characterized in that it exhibits a layered crystal structure containing oxygen (O) and at least carbon, strontium (Sr), bismuth (Bi), tantalum (Ta) and niobium (Nb), has an empirical formula of SrBiyTa2O9+/-d or SrxBiy(Ta, Nb)2O9+/-d, provided that 0.90 </= x < 1.00, 1.70 < y </= 3.20, 0 </= d </= 1.00, and has a carbon content of 5 at % or less. The ferroelectric thin film has a composition range which is most suitable for providing good remanence polarization characteristics and also has a bismuth based layered crystal structure exhibiting high reliability.
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| 申请公布号 |
WO02058129(A1) |
申请公布日期 |
2002.07.25 |
| 申请号 |
WO2002JP00302 |
申请日期 |
2002.01.18 |
| 申请人 |
KABUSHIKI KAISHA WATANABE SHOKO;YAMOTO, HISAYOSHI;TODA, MASAYUKI;KUSUHARA, MASAKI;UMEDA, MASARU;FUKAGAWA, MITSURU |
发明人 |
YAMOTO, HISAYOSHI;TODA, MASAYUKI;KUSUHARA, MASAKI;UMEDA, MASARU;FUKAGAWA, MITSURU |
| 分类号 |
C23C16/40;C23C16/448;H01L21/02;H01L21/316;H01L21/8246;H01L27/115;(IPC1-7):H01L21/316;H01L21/31 |
主分类号 |
C23C16/40 |
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