| 发明名称 |
Solid-state memory with magnetic storage cells |
| 摘要 |
A solid-state memory including an array of magnetic storage cells and a set of conductors. The solid-state memory includes circuitry for reducing leakage current among the conductors thereby increasing signal to noise ratio during read operations.
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| 申请公布号 |
US6424565(B2) |
申请公布日期 |
2002.07.23 |
| 申请号 |
US20000561317 |
申请日期 |
2000.04.28 |
| 申请人 |
HEWLETT-PACKARD COMPANY |
发明人 |
BRUG JAMES A.;TRAN LUNG T.;ANTHONY THOMAS C.;BHATTACHARYYA MANOJ K.;NICKEL JANICE |
| 分类号 |
G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L27/22;H01L43/08;(IPC1-7):G11C11/14 |
主分类号 |
G11C11/15 |
| 代理机构 |
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