发明名称 |
Method of fabricating power rectifier device |
摘要 |
A vertical semiconductor rectifier device includes a semiconductor substrate of first conductivity type and having a plurality of gates insulatively formed on a first major surface and a plurality of source/drain regions of the first conductivity type formed in surface regions of second conductivity type in the first major surface adjacent to the gates. A plurality of channels of the second conductivity type each abuts a source/drain region and extends under a gate.
|
申请公布号 |
US6420225(B1) |
申请公布日期 |
2002.07.16 |
申请号 |
US20010805815 |
申请日期 |
2001.03.13 |
申请人 |
APD SEMICONDUCTOR, INC. |
发明人 |
CHANG PAUL;RODOV VLADIMIR;CHERN GEENG-CHUAN;LIN CHARLES;CHIANG CHING-LANG |
分类号 |
H01L21/28;H01L21/329;H01L21/336;H01L27/07;H01L27/08;H01L27/095;H01L29/06;H01L29/10;H01L29/78;H01L29/861;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|