VOLTAGE PROVIDING CIRCUIT FOR ERASING FLASH MEMORY

摘要

PROBLEM TO BE SOLVED: To give negative and positive high voltage to a flash memory cell erased from the outside of a chip comprising a flash memory cell using or without using a negative and a positive high voltage pump circuits. SOLUTION: Internal pump circuits (12, 13) on a chip are turned off while external voltage (10, 11) is used. Negative and positive high voltage being the external voltage is connected to a gate and a source of a selected cell to be erased by a voltage control module (14). The external voltage is used for performing efficiently an erase function when program and erase operation are performed in a manufacturing process. The internal high voltage pump circuit is used for erasing a flash memory cell on a circuit board by a user after assembling is finished.