| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to remove a shape of moat from an edge portion of an isolation layer by planarizing an oxide layer. CONSTITUTION: A pad oxide layer(110) and a pad nitride layer are laminated on a silicon substrate(100). A pattern of a photo-resist layer is formed on the pad nitride layer. A trench is formed by etching the pad nitride layer and the pad nitride layer of a trench region and the silicon substrate(100). The photo-resist layer is removed. A sacrificial oxide layer is formed by oxidizing a surface of the silicon surface(100). The trench is buried by using an HDP-CVD(High Density Plasma-Chemical Vapor Deposition) oxide layer as a buried oxide layer(150). A stepped portion of the buried oxide layer(150) is controlled by polishing the buried oxide layer(150). A nitride layer spacer is formed thereon. Phosphorous ions are implanted into the buried oxide layer(150). The pad oxide layer and the nitride layer spacer are removed. The buried oxide layer(150) and the pad oxide layer(110) are cleaned.
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