| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon containing positive type resist composition suitable for being exposed with a KrF excimer laser and a pattern forming method using the resist composition. SOLUTION: A photoacid generation agent is added to a resin represented by formula (1) [where at least, one R3 is a group containing a silicon atom; A is a unit having a group which is released by an acid, and may include silicon atoms; B is a unit which is copolymerized with A and C, and may include silicon atoms; C is represented by formula (2) [where neither x nor y includes zero, and z includes zero.] to from the photosensitive resist composition. |
