发明名称 SEMICONDUCTOR DEVICE WITH EVALUATION UNIT AND EVALUATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device with an evaluation unit capable of evaluation dielectric characteristics between a gate and a drain on an apparatus for evaluating RF characteristics for a semiconductor on a wafer and its evaluation method. SOLUTION: The device includes a semiconductor element 1 having a gate electrode 2, a source electrode 4 and a drain electrode 3; a gate electrode pad 6 connected to the gate electrode 2; a gate-grounding pad 7 that is provided in response to the gate electrode pad 6 and constitutes a pad for measuring a withstand voltage with the gate electrode pad 6; a source electrode pad 14 that is connected to the source electrode 4 and is electrically separated from the gate-side grounding pad 7; a drain electrode pad 11 connected to the drain electrode 3; and a drain-side grounding pad 12 provided in response to the drain electrode pad 11.
申请公布号 JP2002198408(A) 申请公布日期 2002.07.12
申请号 JP20000393076 申请日期 2000.12.25
申请人 MITSUBISHI ELECTRIC CORP 发明人 HOSHI HIROYUKI
分类号 G01R31/26;H01L21/66;(IPC1-7):H01L21/66 主分类号 G01R31/26
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