MANUFACTURING METHOD FOR RAISED SOURCE/DRAIN(S/D) REGION IN DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for self-aligned raised source/drain(S/D) regions. SOLUTION: The manufacturing method has a process for forming on a substrate a first insulation layer having a gate opening portion and source/drain opening portions adjacent to the gate opening portion; a process for forming a gate dielectric layer on the substrate present in the gate opening portion; a process for so forming a doped conductive layer with a dopant as to fill it into the gate and source/drain opening portions; a process for so flattening the doped conductive layer as to make the level of its top surface equal to the one of the first insulation layer; a process for so filling the gate opening portion with the doped conductive layer as to form a gate on the gate dielectric layer; a process for so filling the source/drain opening portions with the doped conductive layer as to form raised source/ drain regions; a process for so removing spacer portions present between the gate and the raised source/drain regions as to form spacer opening portions; a process for forming LDD regions in the substrate present inside the spacer opening portions by an ion implantation, etc., a process for so forming a dielectric layer on the substrate as to fill the spacer opening portions with it; and a process for so diffusing the dopant from the raised source/drain regions by a thermal cycle, etc., as to form source/drain regions in the substrate present just below the raised source/drain regions.