| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a wiring structure using a dual damascene process and which has a capacitor that can be easily modified in design and also in capacitance. SOLUTION: A lower electrode 18b of a capacitor is formed simultaneously with a first Cu wiring layer 18a using a first Cu film 18. An opening 20b for formation of an upper electrode 24b of the capacitor is made in an interlayer insulating film 19 simultaneously with a via hole 20a, a silicon nitride film 19a as the lowermost layer film of the interlayer insulating film 19 is left on the bottom of the opening to be used for a dielectric film 25 of the capacitor. The upper electrode 24b is formed simultaneously with a second Cu wiring layer 24a using a second Cu film 24 of a dual damascene wiring. In this manner, the capacitor is simultaneously formed in a wiring step using the dual damascene process.
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