| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an active matrix display having pixel structure that ideally arranges a pixel electrode formed at a pixel section and scanning (gate) and data lines, and at the same time achieves a high opening rate without increasing the number of masks and processes. SOLUTION: First wiring is provided via a first insulating film between a semiconductor film and a substrate. The first wiring is overlapped to the semiconductor film for use as a shield film. Additionally, a second insulating film used as a gate insulating film is formed on the semiconductor film, and a gate electrode and second wiring are formed on the second insulating film. The first and second wiring crosses via the first and second insulating films. In the upper layer of the second wiring, a third insulating film is formed as an interlayer insulating film, and the pixel electrode is formed on the third insulating film. The pixel electrode can be formed by overlapping the first and second wiring, and the area of the pixel electrode can be expanded in a reflection-type display.</p> |
