| 发明名称 |
HYDROGEN FLUORIDE SOLUTION FOR SURFACE TREATMENT OF RESIST, METHOD FOR REMOVING RESIST AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE USING THE METHOD |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for removing a resist formed on a dielectric film without varying the thickness and width of the dielectric film. SOLUTION: In the method for removing a resist, a formed resist is surface- treated with a hydrogen fluoride solution and then removed with an organic solvent. |
| 申请公布号 |
JP2002196508(A) |
申请公布日期 |
2002.07.12 |
| 申请号 |
JP20000390356 |
申请日期 |
2000.12.22 |
| 申请人 |
MITSUBISHI CHEMICALS CORP |
发明人 |
HASHIMOTO MAKIKO;SHIMOYAMA KENJI;KIYOMI KAZUMASA |
| 分类号 |
G03F7/42;H01L21/027;H01L21/308;H01S5/223;(IPC1-7):G03F7/42 |
主分类号 |
G03F7/42 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
