| 摘要 |
PROBLEM TO BE SOLVED: To integrate a diode element with satisfactory efficiency regarding the diode element whose breakdown strength in its turn-off operation is enhanced in a semiconductor integrated-circuit device with a built-in spark killer diode suitable for protecting the output transistor. SOLUTION: In the diode element in the semiconductor integrated-circuit device, a first N+ type buried layer 34 and a first P+ type buried layer 35 are formed so a to be superposed between a substrate 24 and a first epitaxial layer 25. A second P+ type buried layer 26 and the layer 35 which are formed between the layer 25 and a second epitaxial layer 26 are connected and formed. The width of the base region of a parasitic NPN transistor TR1 is expanded, its current amplification factor is reduced, and the breakdown strength in the turn-off operation of the diode element is enhanced.
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