| 摘要 |
<p>In making a fuse that is used as a load in semiconducting memory elements, boron is diffused in the n+ region in the same quantity as the p+ region. When the p+ region is formed, all oxide layers on the polycrystalline silicon are eliminated, and the boron is diffused to manufacture the polysilicon anti-fuse. The fuse comprises an n-type poly-silicon (5) and a p-type polysilicon region (7), so that it forms a back-to-back diode having a p-n-p structure.</p> |
