TUNNEL RING MAGNETO-RESISTANCE DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A tunnel ring magneto-resistance element and a method for fabricating the same are provided to fabricate efficiently an oxide tunneling barrier by improving a lowering phenomenon of a magneto-resistive ratio. CONSTITUTION: An anti-ferromagnetic layer(110) is deposited on a silicon substrate. A fixing layer(120) is deposited on the anti-ferromagnetic layer(110). An oxide tunneling barrier(130) is deposited on the fixing layer(120). A free layer(140) is deposited on the oxide tunneling barrier(130). An FeN layer(150) is formed between the fixing layer(120) and the oxide later tunnel barrier(130). The fixing layer(120) is formed by ferromagnetic material such as CoFe or NiFe. The FeN layer(150) is formed by implanting nitrogen gas into the fixing layer(120) and combining Fe ions with N ions on a surface of the fixing layer(120).