| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory in which a defect such as word line-bit line connection, word line-bulk connection, word line-word line connection, or the like can be relieved. SOLUTION: This device comprises a memory cell array, a global word line, a global decoder circuit, a local decoder circuit, and a sector selection circuit, a word line selection switch of a global decoder circuit 110 is constituted of two NMOS transistors 200 and 202.</p> |
