| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to reduce a tunneling current by using a dummy pattern. CONSTITUTION: In a metal/poly line formation processing using a plasma, a dummy pattern is formed at a region having a low pattern density in order to reduce an etching selectivity in accordance with a pattern density. At this time, the dummy pattern is formed so as to make a space between patterns having two time less than of a minimum design rule.
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