| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device in which the parasitic capacitances between word lines and a substrate are reduced. SOLUTION: This semiconductor storage device has the substrate, a trench formed at a prescribed position on the substrate, a capacitor positioned in the lowermost part of the trench, and a transistor having a gate extended in the vertical direction along the side walls of the trench above the capacitor in the trench. The storage device is provided with a first word line which is positioned above the trench and connected to the gate of the transistor, and a second word line which is extended in parallel with the first word line. The transistor has a first diffusion layer which is extended in the horizontal direction from a spot above the gate of the transistor provided in the trench along the substrate on the outside of the trench, and a second diffusion layer connected to the capacitor provided in the lowermost part of the trench from the lower part of the gate. As the feature of this semiconductor storage device, the storage device is provided with an insulating film which separates the second word line from a first diffusion area and has a prescribed thickness under the second word line. The first diffusion layer of the transistor is connected to the bit line of the storage device through the bottom side of the second word line. |
