| 摘要 |
PROBLEM TO BE SOLVED: To integrate a diode element with satisfactory efficiency regarding the diode element whose breakdown strength in its turn-off operation is enhanced in a semiconductor integrated-circuit device with a built-in spark killer diode suitable for protecting the output transistor. SOLUTION: In the semiconductor integrated-circuit device, a first P+ type buried layer 35 formed as an anode region and an N+ type diffusion region 41 formed in a cathode region are formed so as to be separated in the depth direction. When a reverse bias is applied to the diode element 21, a depletion- layer formation region can be obtained in an N-type region which is composed of a first epitaxial layer 25 and a second epitaxial layer 26 in a P-N junction, the breakdown strength of the diode element is ensured by a depletion layer formed at this time, and it is possible to restrain the breakdown of an internal element due to a breakdown current.
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