SILICON SUBSTRATE, SOI SUBSTRATE, AND MOS LOW-POWER AND HIGH-SPEED CIRCUIT FOR TFT

摘要

PROBLEM TO BE SOLVED: To provide a method for achieving both low power and high speed in a transistor circuit. SOLUTION: To achieve an optimum state in standby and operation of a threshold voltage in a transistor, a substrate at the lower section of a gate electrode is changed to the same potential as a source, and forward potential to the source by floating and a bias generation circuit. The example of a CMOS circuit is illustrated. The COMS circuit is composed of automatic substrate bias circuits 123 and 124 for P- and N-channel MOS transistors, respectively.