| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an active matrix substrate and its manufacturing method in which discontinuity of data lines to be used as main wiring on an active matrix substrate and pattern failure are reduced. SOLUTION: After the formation of a gate insulation film 3, the gate insulation film under a data line 71 is selectively removed to remove foreign objects in the film 3 and pattern collapse of the line 71 and discontinuity are reduced. Moreover, by forming a groove 6 on the film 3 under the line 71, the gap between the line 71 and a pixel electrode 9 is effectively expanded and a point failure such as a short circuit between the data line and the pixel electrode caused by a-Si residuals being produced in a conventional circumstance in which the gate insulation film exists under the data line is reduced.</p> |
