| 摘要 |
PURPOSE: Provided are a slurry for polishing ruthenium, which contains a polishing agent, aqua regia, and ammonium salts, and a method for forming a ruthenium lower electrode by using the slurry. CONSTITUTION: The slurry for polishing the ruthenium contains: the polishing agent containing cerium oxide and zirconium oxide and having an average particle size of 0.1-0.6 micrometer; 1-5wt%(based on the slurry) of the aqua regia having a mole concentration of 1-12, which keeps the pH of the slurry to be 2-3; 10-20wt%(based on the slurry) of the ammonium salts. And the method for forming the ruthenium lower electrode(29) comprises the steps of: depositing ruthenium lower electrode material of a capacitor on a substrate(20) and spreading a photoresist; performing a chemical mechanical polishing by using the slurry. |
