发明名称 Ion production device for ion beam irradiation apparatus
摘要 An ion beam irradiation apparatus is provided with a plasma production device 30 which produces a plasma 12 through the radio frequency discharge and supplies the produced plasma in the vicinity of the substrate 4. The plasma production device 30 includes a plasma producing chamber 32 being elongated along an axis 33 extending in scanning directions X in which the ion beam is moved; a plasma emission hole 34 being provided in a side thereof and elongated along the axis 33 of the plasma producing chamber; and a magnet 36 provided outside the plasma producing chamber 32 for producing a magnetic field having a direction along the axis 33. The magnetic field developed by the magnet 36 contains a magnetic field which has a direction along the axis and bends to the substrate ions contained in the plasma 12 emitted from a plasma emission hole 34.
申请公布号 US2002088950(A1) 申请公布日期 2002.07.11
申请号 US20010996926 申请日期 2001.11.30
申请人 NISSIN ELECTRIC CO., LTD. 发明人 HAMAMOTO NARIAKI;SAKAI SHIGEKI
分类号 C23C14/48;H01J27/16;H01J37/08;H01J37/317;H01L21/265;(IPC1-7):G21K5/10 主分类号 C23C14/48
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