发明名称 |
Ion production device for ion beam irradiation apparatus |
摘要 |
An ion beam irradiation apparatus is provided with a plasma production device 30 which produces a plasma 12 through the radio frequency discharge and supplies the produced plasma in the vicinity of the substrate 4. The plasma production device 30 includes a plasma producing chamber 32 being elongated along an axis 33 extending in scanning directions X in which the ion beam is moved; a plasma emission hole 34 being provided in a side thereof and elongated along the axis 33 of the plasma producing chamber; and a magnet 36 provided outside the plasma producing chamber 32 for producing a magnetic field having a direction along the axis 33. The magnetic field developed by the magnet 36 contains a magnetic field which has a direction along the axis and bends to the substrate ions contained in the plasma 12 emitted from a plasma emission hole 34.
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申请公布号 |
US2002088950(A1) |
申请公布日期 |
2002.07.11 |
申请号 |
US20010996926 |
申请日期 |
2001.11.30 |
申请人 |
NISSIN ELECTRIC CO., LTD. |
发明人 |
HAMAMOTO NARIAKI;SAKAI SHIGEKI |
分类号 |
C23C14/48;H01J27/16;H01J37/08;H01J37/317;H01L21/265;(IPC1-7):G21K5/10 |
主分类号 |
C23C14/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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