发明名称 |
FERROELECTRIC STORAGE READ-WRITE MEMORY |
摘要 |
A memory device including at least one pair of spaced apart conductors and a ferroelectric material between the pair of conductors. The pair of conductors is spaced apart a distance sufficient to permit a tunneling current therebetween.
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申请公布号 |
US2002089005(A1) |
申请公布日期 |
2002.07.11 |
申请号 |
US19980190131 |
申请日期 |
1998.11.12 |
申请人 |
WICKRAMASINGHE HEMANTHA K.;SARAF RAVI F. |
发明人 |
WICKRAMASINGHE HEMANTHA K.;SARAF RAVI F. |
分类号 |
C12N15/00;G11C11/22;G11C13/02;H01L21/8246;H01L27/10;H01L27/105;H01L51/00;H01L51/05;H01L51/30;H01L51/40;(IPC1-7):H01L29/76 |
主分类号 |
C12N15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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