发明名称 Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
摘要 A semiconductor device having and electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of individual units of plural memory cells. The semiconductor device which functions as a microcomputer chip also has a processing unit and includes an input terminal for receiving an operation mode signal for switching the microcomputer between a first operation mode in which the flash memory is rewritten under control of a processing unit and a second operation mode in which the flash memory is rewritten under control of separate writing circuit externally connectable to the microcomputer.
申请公布号 US6166953(A) 申请公布日期 2000.12.26
申请号 US19990414944 申请日期 1999.10.08
申请人 HITACHI, LTD.;HITACHI VLSI ENGINEERING CORPORATION 发明人 MATSUBARA, KIYOSHI;YASHIKI, NAOKI;BABA, SHIRO;ITO, TAKASHI;MUKAI, HIROFUMI;SATO, MASANAO;TERASAWA, MASAAKI;KURODA, KENICHI;SHIBA, KAZUYOSHI
分类号 G06F9/445;G06F15/78;G11C7/10;G11C16/04;G11C16/10;G11C16/16;G11C16/26;G11C16/30;H01L21/8247;H01L27/105;H01L27/115;(IPC1-7):G11C16/04 主分类号 G06F9/445
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