发明名称 Integrated thin film capacitor/inductor/interconnect system and method
摘要 A system and method for the fabrication of high reliability capacitors (1011), inductors (1012), and multi-layer interconnects (1013) (including resistors (1014)) on various thin film hybrid substrate surfaces (0501) is disclosed. The disclosed method first employs a thin metal layer (0502) deposited and patterned on the substrate (0501). This thin patterned layer (0502) is used to provide both lower electrodes for capacitor structures (0603) and interconnects (0604) between upper electrode components. Next, a dielectric layer (0705) is deposited over the thin patterned layer (0502) and the dielectric layer (0705) is patterned to open contact holes (0806) to the thin patterned layer. The upper electrode layers (0907, 0908, 1009, 1010) are then deposited and patterned on top of the dielectric (0705).
申请公布号 US2002089810(A1) 申请公布日期 2002.07.11
申请号 US20010960796 申请日期 2001.09.21
申请人 CASPER MICHAEL D.;MRAZ WILLIAM B. 发明人 CASPER MICHAEL D.;MRAZ WILLIAM B.
分类号 H01L21/02;H01L23/522;H01L27/06;H05K1/16;H05K3/46;(IPC1-7):H01G4/228;B32B3/00;B32B7/12;B32B15/04 主分类号 H01L21/02
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