| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to simplify a process for forming a contact plug and to shorten an interval of fabrication time, by simultaneously forming an ohmic contact layer of TiSix, a diffusion barrier layer of TiN and a nitride layer of TiSiN. CONSTITUTION: An insulation layer is formed on a semiconductor substrate(11) having a predetermined structure. A predetermined region of the insulation layer is etched to form a contact hole exposing a predetermined region of the semiconductor substrate. Polycrystalline silicon(13) is formed inside the contact hole. TixNy is deposited to fill the contact hole. A heat treatment is performed to form a contact plug(18) while a surface treatment using plasma is carried out. A lower electrode, a dielectric layer and an upper electrode are sequentially formed on the resultant structure including the contact plug.
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