METHOD OF FORMING SILICON-GERMANIUM LAYER

摘要

PURPOSE: A method of forming a silicon-germanium(SiGe) layer is provided to improve the electrical property and the up-set of a gate structure by reducing the surface roughness of silicon-germanium layer. CONSTITUTION: A semiconductor substrate(11) having a gate oxide layer(12) is fixed in a deposition chamber. SiH4 and H2 flow into the deposition chamber. By using a plasma system, silicon micro-crystallite(100) is formed on the surface of the gate oxide layer. SiH4 and GeH4 and H2 flow into the chamber and SiGe is deposited round the silicon micro-crystallite to form a SiGe layer.(110).