PLANARIZATION METHOD USING RESIST

摘要

PURPOSE: A planarization method using resist is provided to planarize a cell region and a peripheral circuit region, by using a dual coating method so that a step between the cell region and the peripheral circuit region is eliminated. CONSTITUTION: A poly layer is deposited on a semiconductor substrate(100) having a predetermined lower structure after a storage node etch process. The first buffer coating process is performed regarding the resultant structure. The second coating process using resist(130) is performed regarding the resultant structure to planarize the cell region and the peripheral circuit region. One of an organic anti-reflective coating(ARC), spin-on-glass(SOG) or hydrosilesquioxane(HSQ) is used in the first buffer coating process.