METHOD FOR FABRICATING INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating an interconnection of a semiconductor device is provided to form a uniform and stable barrier metal layer by forming zirconium silicide, and to guarantee a stable shallow junction region by minimizing consumption of lower silicon. CONSTITUTION: An impurity region(22) is formed in the surface of a silicon substrate(21). An interlayer dielectric(23) having a contact hole exposing a predetermined region of the impurity region is formed on the silicon substrate. A titanium zirconium layer(24) is formed on the interlayer dielectric including the contact hole. A rapid thermal process is performed to form a titanium zirconium silicide layer(24a) in a portion in contact with the impurity region.