| 摘要 |
PURPOSE: A semiconductor memory device is provided to form constantly generation timing of control signals generated from a peripheral circuit of the semiconductor memory device regardless of a variation of external supply voltage. CONSTITUTION: A plurality of memory cell arrays(10) receive interval supply voltage as supply voltage. A bit line precharge control circuit(12) generates a bit line control signal according to an inverted low address strobe signal. A low address decoder(14) decodes a low address according to the inverted low address strobe signal and selects word lines. A sense amplifier control circuit(16) generates sense amplifier control signals according to the inverted low address strobe signal. A constant delay time is maintained since the internal supply voltage is applied to the bit line precharge control circuit(12), the low address decoder(14), and the sense amplifier control circuit(16). Accordingly, generation timing of control signals is maintained constantly.
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