发明名称 |
Nonvolatile semiconductor memory device with high impurity concentration under field oxide layer |
摘要 |
Flash type programmable nonvolatile memory unit cells are provided, along with a manufacturing method. Each unit cell is formed such that the interpoly dielectric layer and the control gate surround the top surface and also the four lateral surfaces of the floating gate. This increases the capacitance between the floating gate and the control gate, which improves a coupling ratio. This also improves electromagnetic shielding within each cell, which reduces cross talk between neighboring cells, and permits more dense integration.
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申请公布号 |
US6417538(B1) |
申请公布日期 |
2002.07.09 |
申请号 |
US19990360843 |
申请日期 |
1999.07.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI JEONG-HYUK |
分类号 |
H01L21/8247;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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