| 摘要 |
A semiconductor device with a semiconductor body (1) provided with a memory capacitor (12, 26) with a lower electrode (11, 23) consisting of a layer of semiconductor material (7, 23) having a rough surface (8, 24) formed by hemispherical grains (9, 25) of the relevant semiconductor material on which a dielectric layer (12, 27) and an upper electrode (13, 28) are provided. The semiconductor material from which the lower electrode is manufactured is Si1-xGex, wherein 0.2<x<1. The semiconductor device can be manufactured in a simple manner because a layer of Si1-xGex having a rough surface formed by hemispherical grains of this material can be simply directly formed through deposition by means of usual CVD (Chemical Vapor Deposition) processes.
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