发明名称 |
ESD protection network with field oxide device and bonding pad |
摘要 |
An electrostatic discharge protection structure is provided with a dielectric gate, source and drain contacts, and a semiconductor substrate. The semiconductor substrate is of a first conductivity type having the dielectric gate disposed partially on its surface. The source and drain contacts are connected to source and drain diffusion regions of a second conductivity type separated by the dielectric gate. Deep source and drain wells of the second conductivity type respectively disposed under the source and drain diffusion regions define a channel region of the first conductivity type. The channel region is doped so that the surface breakdown voltage is exceeded before the subsurface depletion region punch-through voltage is exceeded between the deep source and drain wells upon an electrostatic discharge at the drain contact.
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申请公布号 |
US6417541(B1) |
申请公布日期 |
2002.07.09 |
申请号 |
US20010759492 |
申请日期 |
2001.01.12 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD |
发明人 |
CAI JUN;LO KENG FOO |
分类号 |
H01L23/62;H01L27/02;H01L29/78;(IPC1-7):H01L23/62 |
主分类号 |
H01L23/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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