| 发明名称 |
Method of manufacturing a semiconductor device |
| 摘要 |
A method of manufacturing a semiconductor device which has a crystalline silicon film comprises the steps of forming crystal nuclei in a surface region of an amorphous silicon film and then growing the crystals from the nuclei by a laser light. Typically the crystal nuclei are silicon crystals or metal silicides having an equivalent structure as silicon crystal.
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| 申请公布号 |
US6417031(B2) |
申请公布日期 |
2002.07.09 |
| 申请号 |
US20010840169 |
申请日期 |
2001.04.24 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OHTANI HISASHI;MIYANAGA AKIHARU;TAKEYAMA JUNICHI |
| 分类号 |
C30B29/06;C30B1/00;C30B30/00;H01L21/02;H01L21/20;H01L21/268;H01L21/336;H01L27/00;H01L27/01;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L21/00;H01L21/84 |
主分类号 |
C30B29/06 |
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