| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to prevent a recess of an interconnection plug of a peripheral region by simultaneously forming a bit line of a cell region and the interconnection plug of the peripheral region. CONSTITUTION: After sequentially forming a number of word lines(45), the first plug(53), a TEOS(Tetra Ethyl Ortho Silicate) layer(55), and the fourth photoresist pattern on a semiconductor substrate(41), trenches are formed by selectively etching the TEOS layer(55) using the fourth photoresist pattern as a mask. Then, second contact holes are formed by selectively etching the TEOS layer(55), a BPSG(Boron Phosphor Silicate Glass)(51), and the first nitride(47). A tin as a glue layer and a tungsten are sequentially deposited on the resultant structure and bit lines(63) of a cell region and interconnection plugs(65) are then formed by etching the entire surface of the resultant structure using a CMP(Chemical Mechanical Polishing) at the same time.
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