| 摘要 |
PURPOSE: A formation method of micro-patterns of semiconductor devices is provided to improve a characteristic and a reliability by hardening a photoresist pattern using an implantation process. CONSTITUTION: After forming an etching defined layer(13) on a semiconductor substrate(11), the resultant structure is processed with a vapor using an HMDS(Hexa-Methyl Di-Silazane). Then, a photoresist is deposited on the etching defined layer(13) and a solvent is evaporated by performing a soft bake for 10-300 seconds at the temperature of 80-250 deg.C. After exposing using an exposure mask and performing a post exposure bake, a photoresist pattern(19) is formed by developing using a TMAH solution having a 2.38% density. Then, an Ar ion implantation is performed to harden the photoresist pattern(19).
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