| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to improve reliability and yield, by effectively eliminating etch residue generated in a dry etch process for forming a capacitor structure. CONSTITUTION: A dry etch process is performed to expose a material including a noble metal element by using a predetermined photoresist pattern. The photoresist pattern is eliminated. An organic layer(13) is applied on the resultant structure. A dry process is performed regarding the organic layer. A wet cleaning process is performed to eliminate the organic layer.
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